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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1344 DESCRIPTION *With TO-3 package *High voltage *Built-in damper diode APPLICATIONS *For color TV horizontal deflection output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 600 5 6 50 150 -40~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO hFE-1 hFE-2 VF PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain DC current gain Diode forward voltage CONDITIONS IC=100m A;IB=0 IE=200m A;IC=0 IC=4A;IB=0.8 A IC=4A;IB=0.8 A VCB=800V;IE=0 IC=0.5A ; VCE=5V IC=3A ; VCE=5V IF=4A 10 5 MIN 600 5 2SD1344 TYP. MAX UNIT V V 5.0 1.5 10 V V A 2.0 V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1344 Fig.2 Outline dimensions 3 |
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